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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB744 2SB744A DESCRIPTION With TO-126 package Complement to type 2SD794/794A Excellent hFE linearity APPLICATIONS For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO VEBO IC ICM IB INCH Base current Collector-emitter voltage ANG 2SB744 EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -70 -45 -60 -5 -3 -5 -0.6 UNIT V V 2SB744A Emitter-base voltage V A A A Collector current (DC) Collector current-Peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1 W 10 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB744 V(BR)CEO Collector-emitter breakdown voltage 2SB744A VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCB=-45V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-0.5A ; VCE=-5V IC=-0.1A ; VCE=-5V IC=-10mA; IB=0 CONDITIONS 2SB744 2SB744A SYMBOL MIN -45 TYP. MAX UNIT V -60 -0.5 -0.8 -2.0 -2.0 -1 -1 30 60 120 100 45 320 MHz pF |I |I V V A A Transition frequency O Y Collector output capacitance hFE-2 Classifications R 60-120 HAN INC 100-200 160-320 SEM GE f=1MHz ; VCB=-10V;IE=0 OND IC TOR UC 60 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB744 2SB744A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB744 2SB744A SEM GE HAN INC OND IC TOR UC 4 |
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